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RB215T-40
Diodes
Schottky barrier diode
RB215T-40
Applications Switching power supply External dimensions (Unit : mm)
4.50.3 0.1
Structure
1.2
1.3 0.8 (1) (2) (3)
13.5MIN
Construction Silicon epitaxial planar
5.00.2
8.00.2 12.00.2
Features 1) Cathode common dual type. (TO-220) 2) Low IR 3) High reliability
10.00.3 0.1
2.80.2 0.1
15.00.4 0.2 8.0 0.70.1 0.05
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter Forward voltage (repetitive peak) Forward voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 20 100 150 -40 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.55 500 1.75 Unit V A /W Conditions IF=10A VR=40V junction to case
Rev.B
1/3
RB215T-40
Diodes
Electrical characteristic curves
10 Ta=150 1000000 100000 Ta=150 Ta=125 10000 f=1MHz
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=125 1 Ta=75 Ta=25 0.1 Ta=-25
10000 1000 100 10 1 0.1
Ta=75
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000
100
Ta=25 Ta=-25
10
0.01 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600
1 0 5 10 15 20 25 30 35 40 0 10 20 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
500
200 Ta=25 IF=3A n=30pcs Ta=25 VR=40V n=30pcs
2550 2540 Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
150
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
490
REVERSE CURRENT:IR(uA)
2530 2520 2510 2500 2490 2480 2470 2460 AVE:2515.6pF
480
100
470
50
460 AVE:472.9mV 450 VF DISPERSION MAP
0
AVE:34.4uA
2450
IR DISPERSION MAP
Ct DISPERSION MAP
300
30 Ifsm 1cyc 8.3ms
1000
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50
25 20 15 10 5 AVE:27.4ns 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc 100
AVE:176.0A 0 IFSM DISRESION MAP
10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100
30
IM=100mA IF=10A
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
FORWARD POWER DISSIPATION:Pf(W)
1ms
time
10
300us
Rth(j-a)
20 D=1/2 Sin(180) 10 DC
100
1
Rth(j-c)
Mounted on epoxy board
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.1 TIME:t(s) 10 Rth-t CHARACTERISTICS 1000 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 40
Rev.B
2/3
RB215T-40
Diodes
10
50
50 0A 0V Io t T VR D=t/T VR=20V Tj=150 40 30 20 10 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 0
0A 0V D=1/2 DC
Io t T VR D=t/T VR=20V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
REVERSE POWER DISSIPATION:PR (W)
D=1/2 30 20 10 0
DC
6 D=1/2 4 Sin(180) 2 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC
Sin(180)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
8
40
Sin(180)
25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
150
30 No break at 30kV 25
ELECTROSTATIC DISCHARGE TEST ESD(KV)
AVE:25.7kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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